All MOSFET. RJK4006DPP-M0 Datasheet

 

RJK4006DPP-M0 MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK4006DPP-M0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.69 Ohm

Package: TO220FL

RJK4006DPP-M0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK4006DPP-M0 Datasheet (PDF)

4.1. r07ds0228ej rjk4006dpp.pdf Size:79K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

 Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features  Low on-resistance RDS(on) = 0.69  typ. (ID = 4 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source

5.1. rej03g1547 rjk4006dpdds.pdf Size:116K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. rjk4002dje.pdf Size:84K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

 Preliminary Datasheet RJK4002DJE R07DS0842EJ0200 400V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 03, 2012 Features  Low on-state resistance RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Max

8.2. r07ds0551ej rjk4002dpp.pdf Size:78K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

 Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 03, 2011 Features  Low on-state resistance RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Abso

 8.3. rjk4002dpd.pdf Size:94K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

 Preliminary Datasheet RJK4002DPD R07DS0835EJ0210 400V - 3A - MOS FET Rev.2.10 High Speed Power Switching Jan 29, 2014 Features • Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1

8.4. r07ds0229ej rjk4007dpp.pdf Size:76K _renesas

RJK4006DPP-M0
RJK4006DPP-M0

 Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 15, 2010 Features  Low on-resistance RDS(on) = 0.47  typ. (at ID = 7 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Sourc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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