RJK4018DPK MOSFET Datasheet: N-Ch, 400V, 43A. Full specification with pinout and replacement list

RJK4018DPK Specs and Replacement

   Type Designator: RJK4018DPK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 134 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO3P

RJK4018DPK substitution

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RJK4018DPK datasheet

..1. Size:79K renesas
r07ds0215ej rjk4018dpk.pdf pdf_icon

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200 (Previous REJ03G1490-0100) Silicon N Channel MOS FET Rev2.00 High Speed Power Switching Dec 03, 2010 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga... See More ⇒

8.1. Size:91K renesas
rej03g1590 rjk4015dpkds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

8.2. Size:117K renesas
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