RJK5020DPK Datasheet and Replacement
Type Designator: RJK5020DPK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 126 nC
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 525 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.118 Ohm
Package: TO3P
RJK5020DPK substitution
RJK5020DPK Datasheet (PDF)
rej03g1263 rjk5020dpkds.pdf
Preliminary Datasheet RJK5020DPK REJ03G1263-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item
r07ds0422ej rjk5026dpp.pdf
Preliminary Datasheet RJK5026DPP-M0 R07DS0422EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source
r07ds0494ej rjk5026dpe.pdf
Preliminary Datasheet RJK5026DPE R07DS0494EJ0200(Previous: REJ03G1852-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 21, 2011Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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