RJK5030DPP-M0 Datasheet. Specs and Replacement

Type Designator: RJK5030DPP-M0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO220FL

RJK5030DPP-M0 substitution

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RJK5030DPP-M0 datasheet

 4.1. Size:77K  renesas
r07ds0227ej rjk5030dpp.pdf pdf_icon

RJK5030DPP-M0

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolu... See More ⇒

 5.1. Size:68K  renesas
r07ds0050ej rjk5030dpd.pdf pdf_icon

RJK5030DPP-M0

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3.... See More ⇒

 8.1. Size:94K  renesas
r07ds0417ej rjk5031dpd.pdf pdf_icon

RJK5030DPP-M0

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S... See More ⇒

 8.2. Size:70K  renesas
r07ds0179ej rjk5033dpd.pdf pdf_icon

RJK5030DPP-M0

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S ... See More ⇒

Detailed specifications: RJK5014DPK, RJK5015DPK, RJK5015DPM, RJK5018DPK, RJK5020DPK, RJK5026DPE, RJK5026DPP-M0, RJK5030DPD, 75N75, RJK5031DPD, RJK5033DPD, RJK5033DPP-M0, RJK6002DPD, RJK6002DPE, RJK6006DPD, RJK6011DJE, RJK6012DPE

Keywords - RJK5030DPP-M0 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs