RJK6002DPD Datasheet. Specs and Replacement
Type Designator: RJK6002DPD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm
Package: MP3A
RJK6002DPD substitution
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RJK6002DPD datasheet
rej03g1483 rjk6002dpdds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rjk6002dpe.pdf
Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.... See More ⇒
rjk6002dph-e0.pdf
Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Mar 21, 2013 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒
Detailed specifications: RJK5020DPK, RJK5026DPE, RJK5026DPP-M0, RJK5030DPD, RJK5030DPP-M0, RJK5031DPD, RJK5033DPD, RJK5033DPP-M0, IRF1405, RJK6002DPE, RJK6006DPD, RJK6011DJE, RJK6012DPE, RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM
Keywords - RJK6002DPD MOSFET specs
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