All MOSFET. RJK6002DPE Datasheet

 

RJK6002DPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJK6002DPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm
   Package: LDPAK

 RJK6002DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK6002DPE Datasheet (PDF)

 ..1. Size:98K  renesas
 rjk6002dpe.pdf

RJK6002DPE RJK6002DPE

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jun 21, 2012Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4.

 5.1. Size:115K  renesas
 rej03g1483 rjk6002dpdds.pdf

RJK6002DPE RJK6002DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:90K  renesas
 rjk6002dph-e0.pdf

RJK6002DPE RJK6002DPE

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Mar 21, 2013Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

 6.1. Size:59K  renesas
 rjk6002dje.pdf

RJK6002DPE RJK6002DPE

Preliminary DatasheetRJK6002DJE R07DS0845EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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