RJK6002DPE Datasheet. Specs and Replacement

Type Designator: RJK6002DPE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm

Package: LDPAK

RJK6002DPE substitution

- MOSFET ⓘ Cross-Reference Search

 

RJK6002DPE datasheet

 ..1. Size:98K  renesas
rjk6002dpe.pdf pdf_icon

RJK6002DPE

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.... See More ⇒

 5.1. Size:115K  renesas
rej03g1483 rjk6002dpdds.pdf pdf_icon

RJK6002DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.2. Size:90K  renesas
rjk6002dph-e0.pdf pdf_icon

RJK6002DPE

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Mar 21, 2013 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒

 6.1. Size:59K  renesas
rjk6002dje.pdf pdf_icon

RJK6002DPE

Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1... See More ⇒

Detailed specifications: RJK5026DPE, RJK5026DPP-M0, RJK5030DPD, RJK5030DPP-M0, RJK5031DPD, RJK5033DPD, RJK5033DPP-M0, RJK6002DPD, 7N60, RJK6006DPD, RJK6011DJE, RJK6012DPE, RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM, RJK6018DPK

Keywords - RJK6002DPE MOSFET specs

 RJK6002DPE cross reference

 RJK6002DPE equivalent finder

 RJK6002DPE pdf lookup

 RJK6002DPE substitution

 RJK6002DPE replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility