RJK6015DPM
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK6015DPM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 67
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 240
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
TO3PFM
RJK6015DPM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK6015DPM
Datasheet (PDF)
0.1. Size:91K renesas
rej03g1752 rjk6015dpmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:120K renesas
rej03g1536 rjk6015dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.2. Size:233K inchange semiconductor
rjk6015dpk.pdf
isc N-Channel MOSFET Transistor RJK6015DPKFEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Low on-resistance Low leakage current High speed switching
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