RJK6020DPK Datasheet PDF and Equivalents Search

 0.1. Size:99K  renesas
 rej03g1465 rjk6020dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:91K  renesas
 rej03g1870 rjk6025dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:98K  renesas
 r07ds0424ej rjk6024dpe.pdf

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc... See More ⇒

 8.3. Size:116K  renesas
 rej03g1484 rjk6022djeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.4. Size:136K  renesas
 rjk6024dp3-a0.pdf

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc... See More ⇒

 8.5. Size:74K  renesas
 rej03g1936 rjk6024dpdds.pdf

Preliminary Datasheet RJK6024DPD REJ03G1936-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source ... See More ⇒

 8.6. Size:135K  renesas
 rjk6025dpd.pdf

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2... See More ⇒

 8.7. Size:117K  renesas
 rej03g1479 rjk6026dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.8. Size:89K  renesas
 rjk6025dph-e0.pdf

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒

 8.9. Size:79K  renesas
 rej03g1895 rjk6029djads.pdf

Preliminary Datasheet RJK6029DJA REJ03G1895-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 18, 2010 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0003DA-A (Package name TO-92(1)) D 1. Source 2. Drain 3. Gate G ... See More ⇒