RJK6024DPD Datasheet and Replacement
Type Designator: RJK6024DPD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 7.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 42 Ohm
Package: MP3A
RJK6024DPD substitution
RJK6024DPD Datasheet (PDF)
rej03g1936 rjk6024dpdds.pdf

Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source
r07ds0424ej rjk6024dpe.pdf

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc
rjk6024dp3-a0.pdf

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc
Datasheet: RJK6013DPE , RJK6014DPK , RJK6015DPK , RJK6015DPM , RJK6018DPK , RJK6018DPM , RJK6020DPK , RJK6022DJE , HY1906P , RJK6024DPE , RJK6025DPD , RJK6025DPE , RJK6026DPE , RJK6029DJA , RJK6034DPD-E0 , RJK6052DPP-M0 , RJK6053DPP-M0 .
History: HAT2027R | SSM6K18TU | KUK7606-55A | PM569BA
Keywords - RJK6024DPD MOSFET datasheet
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RJK6024DPD lookup
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RJK6024DPD replacement
History: HAT2027R | SSM6K18TU | KUK7606-55A | PM569BA



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