RJK6024DPD MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK6024DPD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 7.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 42 Ohm
Package: MP3A
RJK6024DPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK6024DPD Datasheet (PDF)
rej03g1936 rjk6024dpdds.pdf
Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source
r07ds0424ej rjk6024dpe.pdf
Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc
rjk6024dp3-a0.pdf
Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N6903JANTX
History: 2N6903JANTX
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