RJK6024DPD Datasheet. Specs and Replacement
Type Designator: RJK6024DPD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 7.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 42 Ohm
Package: MP3A
RJK6024DPD substitution
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RJK6024DPD datasheet
rej03g1936 rjk6024dpdds.pdf
Preliminary Datasheet RJK6024DPD REJ03G1936-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source ... See More ⇒
r07ds0424ej rjk6024dpe.pdf
Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc... See More ⇒
rjk6024dp3-a0.pdf
Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc... See More ⇒
Detailed specifications: RJK6013DPE, RJK6014DPK, RJK6015DPK, RJK6015DPM, RJK6018DPK, RJK6018DPM, RJK6020DPK, RJK6022DJE, AOD4184A, RJK6024DPE, RJK6025DPD, RJK6025DPE, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0, RJK6053DPP-M0
Keywords - RJK6024DPD MOSFET specs
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