All MOSFET. RJK6024DPD Datasheet

 

RJK6024DPD MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJK6024DPD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 7.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 42 Ohm
   Package: MP3A

 RJK6024DPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK6024DPD Datasheet (PDF)

 0.1. Size:74K  renesas
rej03g1936 rjk6024dpdds.pdf

RJK6024DPD
RJK6024DPD

Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

 5.1. Size:98K  renesas
r07ds0424ej rjk6024dpe.pdf

RJK6024DPD
RJK6024DPD

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc

 5.2. Size:136K  renesas
rjk6024dp3-a0.pdf

RJK6024DPD
RJK6024DPD

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc

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