RJK6025DPD Datasheet. Specs and Replacement

Type Designator: RJK6025DPD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 7.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 17.5 Ohm

Package: MP3A

RJK6025DPD substitution

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RJK6025DPD datasheet

 ..1. Size:135K  renesas
rjk6025dpd.pdf pdf_icon

RJK6025DPD

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2... See More ⇒

 5.1. Size:91K  renesas
rej03g1870 rjk6025dpeds.pdf pdf_icon

RJK6025DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.2. Size:89K  renesas
rjk6025dph-e0.pdf pdf_icon

RJK6025DPD

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒

 8.1. Size:98K  renesas
r07ds0424ej rjk6024dpe.pdf pdf_icon

RJK6025DPD

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc... See More ⇒

Detailed specifications: RJK6015DPK, RJK6015DPM, RJK6018DPK, RJK6018DPM, RJK6020DPK, RJK6022DJE, RJK6024DPD, RJK6024DPE, 60N06, RJK6025DPE, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0, RJK6053DPP-M0, RJK6054DPP-M0, RJK6066DPP-M0

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.