RJK6025DPE MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK6025DPE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 17.5 Ohm
Package: LDPAK
RJK6025DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK6025DPE Datasheet (PDF)
rej03g1870 rjk6025dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk6025dpd.pdf
Preliminary Datasheet RJK6025DPD R07DS0676EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 17, 2012Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source12
rjk6025dph-e0.pdf
Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RTF015P02TL
History: RTF015P02TL
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