RJK6025DPE Datasheet. Specs and Replacement
Type Designator: RJK6025DPE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 17.5 Ohm
Package: LDPAK
RJK6025DPE substitution
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RJK6025DPE datasheet
rej03g1870 rjk6025dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rjk6025dpd.pdf
Preliminary Datasheet RJK6025DPD R07DS0676EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2... See More ⇒
rjk6025dph-e0.pdf
Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒
Detailed specifications: RJK6015DPM, RJK6018DPK, RJK6018DPM, RJK6020DPK, RJK6022DJE, RJK6024DPD, RJK6024DPE, RJK6025DPD, IRFP064N, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0, RJK6053DPP-M0, RJK6054DPP-M0, RJK6066DPP-M0, RJK60S5DPK-M0
Keywords - RJK6025DPE MOSFET specs
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