RJK6026DPE Datasheet and Replacement

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc

Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 17, 2012Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source12

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6029DJA REJ03G1895-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 18, 2010Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92(1))D1. Source2. Drain3. GateG