RJL5012DPP-M0 Datasheet. Specs and Replacement

Type Designator: RJL5012DPP-M0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220FL

RJL5012DPP-M0 substitution

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RJL5012DPP-M0 datasheet

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RJL5012DPP-M0

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

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RJL5012DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.2. Size:99K  renesas
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RJL5012DPP-M0

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

 5.1. Size:80K  renesas
r07ds0435ej rjl5012dpe.pdf pdf_icon

RJL5012DPP-M0

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-... See More ⇒

Detailed specifications: RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0, RJK6053DPP-M0, RJK6054DPP-M0, RJK6066DPP-M0, RJK60S5DPK-M0, RJL5012DPE, 50N06, RJL5013DPE, RJL5014DPK, RJL5015DPK, RJL5018DPK, RJL5020DPK, RJL5032DPP-M0, RJL6012DPE, RJL6013DPE

Keywords - RJL5012DPP-M0 MOSFET specs

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