All MOSFET. RJL5013DPE Datasheet

 

RJL5013DPE Datasheet and Replacement


   Type Designator: RJL5013DPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
   Package: LDPAK
 

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RJL5013DPE Datasheet (PDF)

 ..1. Size:101K  renesas
r07ds0359ej rjl5013dpe.pdf pdf_icon

RJL5013DPE

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200(Previous: REJ03G1755-0100)Silicon N Channel MOS FET Rev.2.00Apr 18, 2011High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

 5.1. Size:181K  renesas
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RJL5013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:204K  renesas
rjl5012dpp.pdf pdf_icon

RJL5013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:93K  renesas
rjl5012dpp-m0.pdf pdf_icon

RJL5013DPE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

Datasheet: RJK6034DPD-E0 , RJK6052DPP-M0 , RJK6053DPP-M0 , RJK6054DPP-M0 , RJK6066DPP-M0 , RJK60S5DPK-M0 , RJL5012DPE , RJL5012DPP-M0 , IRF640 , RJL5014DPK , RJL5015DPK , RJL5018DPK , RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE , RJL6013DPE , RJL6015DPK .

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