RJL5015DPK Datasheet. Specs and Replacement

Type Designator: RJL5015DPK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 264 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO3P

RJL5015DPK substitution

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RJL5015DPK datasheet

 0.1. Size:77K  renesas
rej03g1912 rjl5015dpkds.pdf pdf_icon

RJL5015DPK

Preliminary Datasheet RJL5015DPK REJ03G1912-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 27, 2010 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1... See More ⇒

 8.1. Size:204K  renesas
rjl5012dpp.pdf pdf_icon

RJL5015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:181K  renesas
rjl5013dpp.pdf pdf_icon

RJL5015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:93K  renesas
rjl5012dpp-m0.pdf pdf_icon

RJL5015DPK

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) ... See More ⇒

Detailed specifications: RJK6053DPP-M0, RJK6054DPP-M0, RJK6066DPP-M0, RJK60S5DPK-M0, RJL5012DPE, RJL5012DPP-M0, RJL5013DPE, RJL5014DPK, IRF640, RJL5018DPK, RJL5020DPK, RJL5032DPP-M0, RJL6012DPE, RJL6013DPE, RJL6015DPK, RJL6018DPK, RJL6020DPK

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