All MOSFET. RJL6013DPE Datasheet

 

RJL6013DPE MOSFET. Datasheet pdf. Equivalent

Type Designator: RJL6013DPE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 0.81 Ohm

Package: LDPAK

RJL6013DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJL6013DPE Datasheet (PDF)

1.1. rjl6013dpp.pdf Size:198K _renesas

RJL6013DPE
RJL6013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. r07ds0437ej rjl6013dpe.pdf Size:81K _renesas

RJL6013DPE
RJL6013DPE

 Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 (Previous: REJ03G1748-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 16, 2011 Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE

 4.1. rej03g1750 rjl6012dpeds.pdf Size:179K _renesas

RJL6013DPE
RJL6013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g1819 rjl6018dpkds.pdf Size:181K _renesas

RJL6013DPE
RJL6013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. rjl6012dpp.pdf Size:179K _renesas

RJL6013DPE
RJL6013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. rej03g1818 rjl6015dpkds.pdf Size:181K _renesas

RJL6013DPE
RJL6013DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. rjl6014dpp.pdf Size:176K _renesas

RJL6013DPE
RJL6013DPE

 Preliminary Datasheet RJL6014DPP R07DS0262EJ0200 (Previous: REJ03G1853-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Mar 01, 2011 Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage

Datasheet: RJL5012DPP-M0 , RJL5013DPE , RJL5014DPK , RJL5015DPK , RJL5018DPK , RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE , IRF3710 , RJL6015DPK , RJL6018DPK , RJL6020DPK , RJL6032DPP-M0 , RJM0306JSP , RQJ0201UGDQA , RQJ0202VGDQA , RQJ0203WGDQA .

 

 
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