All MOSFET. RQJ0305EQDQS Datasheet

 

RQJ0305EQDQS MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQJ0305EQDQS
   Marking Code: EQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: UPAK SC62

 RQJ0305EQDQS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQJ0305EQDQS Datasheet (PDF)

 0.1. Size:126K  renesas
rej03g1779 rqj0305eqdqsds.pdf

RQJ0305EQDQS
RQJ0305EQDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. Size:125K  renesas
r07ds0297ej rqj0305eqd.pdf

RQJ0305EQDQS
RQJ0305EQDQS

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200(Previous: REJ03G1718-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.1. Size:82K  renesas
r07ds0294ej rqj0302ngd.pdf

RQJ0305EQDQS
RQJ0305EQDQS

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500(Previous: REJ03G1271-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.2. Size:129K  renesas
rej03g1780 rqj0306fqdqsds.pdf

RQJ0305EQDQS
RQJ0305EQDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:103K  renesas
rej03g1265 rqj0301hgdqsds.pdf

RQJ0305EQDQS
RQJ0305EQDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:109K  renesas
r07ds0296ej rqj0304dqd.pdf

RQJ0305EQDQS
RQJ0305EQDQS

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200(Previous: REJ03G1717-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.5. Size:128K  renesas
rej03g1778 rqj0304dqdqsds.pdf

RQJ0305EQDQS
RQJ0305EQDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:110K  renesas
r07ds0298ej rqj0306fqd.pdf

RQJ0305EQDQS
RQJ0305EQDQS

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200(Previous: REJ03G1719-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.7. Size:98K  renesas
r07ds0295ej rqj0303pgd.pdf

RQJ0305EQDQS
RQJ0305EQDQS

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500(Previous: REJ03G1272-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AFP2343A

 

 
Back to Top