All MOSFET. RQK0301FGDQS Datasheet

 

RQK0301FGDQS Datasheet and Replacement


   Type Designator: RQK0301FGDQS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: UPAK SC62
 

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RQK0301FGDQS Datasheet (PDF)

 0.1. Size:104K  renesas
rej03g1269 rqk0301fgdqsds.pdf pdf_icon

RQK0301FGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:1435K  cn vbsemi
rqk0301fg.pdf pdf_icon

RQK0301FGDQS

RQK0301FGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

 8.1. Size:104K  renesas
rej03g1270 rqk0302ggdqsds.pdf pdf_icon

RQK0301FGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:83K  renesas
r07ds0306ej rqk0303mgd.pdf pdf_icon

RQK0301FGDQS

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500(Previous: REJ03G1276-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. S

Datasheet: RQJ0601DGDQS , RQJ0602EGDQA , RQJ0602EGDQS , RQJ0603LGDQA , RQK0201QGDQA , RQK0202RGDQA , RQK0203SGDQA , RQK0204TGDQA , IRFB3607 , RQK0302GGDQA , RQK0302GGDQS , RQK0303MGDQA , RQK0601AGDQS , RQK0603CGDQA , RQK0603CGDQS , RQK0604IGDQA , RQK0605JGDQA .

History: 2SK1940-01 | SSP65R260S2 | IXFK27N80Q | APT30M85BVR | NTS4001N | APT10050JVFR | IRFS7537

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