RQK0301FGDQS PDF and Equivalents Search

 

RQK0301FGDQS Specs and Replacement

Type Designator: RQK0301FGDQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: UPAK SC62

RQK0301FGDQS substitution

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RQK0301FGDQS datasheet

 0.1. Size:104K  renesas
rej03g1269 rqk0301fgdqsds.pdf pdf_icon

RQK0301FGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:1435K  cn vbsemi
rqk0301fg.pdf pdf_icon

RQK0301FGDQS

RQK0301FG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise ... See More ⇒

 8.1. Size:104K  renesas
rej03g1270 rqk0302ggdqsds.pdf pdf_icon

RQK0301FGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:83K  renesas
r07ds0306ej rqk0303mgd.pdf pdf_icon

RQK0301FGDQS

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S... See More ⇒

Detailed specifications: RQJ0601DGDQS, RQJ0602EGDQA, RQJ0602EGDQS, RQJ0603LGDQA, RQK0201QGDQA, RQK0202RGDQA, RQK0203SGDQA, RQK0204TGDQA, K4145, RQK0302GGDQA, RQK0302GGDQS, RQK0303MGDQA, RQK0601AGDQS, RQK0603CGDQA, RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA

Keywords - RQK0301FGDQS MOSFET specs

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