BUZ900 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUZ900
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.15 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3

BUZ900 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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