All MOSFET. RQM2201DNS Datasheet

 

RQM2201DNS Datasheet and Replacement


   Type Designator: RQM2201DNS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: WSON03036
 

 RQM2201DNS substitution

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RQM2201DNS Datasheet (PDF)

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RQM2201DNS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: RQK0604IGDQA , RQK0605JGDQA , RQK0606KGDQA , RQK0607AQDQS , RQK0608BQDQS , RQK0609CQDQS , RQK2001HQDQA , RQK2501YGDQA , P60NF06 , RJK0362DSP , RJK0358DSP , HAT1132R , HAT1131R , HAT1130R , HAT1129R , HAT1128R , HAT1139H .

History: CSD85312Q3E | SI1031R | AFP1433 | HGB195N15S

Keywords - RQM2201DNS MOSFET datasheet

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