HAT1130R Specs and Replacement
Type Designator: HAT1130R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
HAT1130R substitution
- MOSFET ⓘ Cross-Reference Search
HAT1130R datasheet
rej03g1244 hat1139h.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g0446 hat1111c.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1234 hat1108c.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: RQK0609CQDQS, RQK2001HQDQA, RQK2501YGDQA, RQM2201DNS, RJK0362DSP, RJK0358DSP, HAT1132R, HAT1131R, 2SK3568, HAT1129R, HAT1128R, HAT1139H, HAT1127H, HAT1125H, RJK0358DPA, 2SK213, 2SK214
Keywords - HAT1130R MOSFET specs
HAT1130R cross reference
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HAT1130R replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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