All MOSFET. HAT1129R Datasheet

 

HAT1129R MOSFET. Datasheet pdf. Equivalent


   Type Designator: HAT1129R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: SOP8

 HAT1129R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HAT1129R Datasheet (PDF)

 8.1. Size:100K  renesas
 rej03g1330 hat1127hds.pdf

HAT1129R HAT1129R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
 hat1128r.pdf

HAT1129R HAT1129R

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S1 2 3Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

 8.3. Size:131K  renesas
 rej03g0406 hat1126rrj.pdf

HAT1129R HAT1129R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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