All MOSFET. HAT1128R Datasheet

 

HAT1128R Datasheet and Replacement


   Type Designator: HAT1128R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
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HAT1128R Datasheet (PDF)

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HAT1128R

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S1 2 3Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

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HAT1128R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:131K  renesas
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HAT1128R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:791K  1
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HAT1128R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: JCS7N60B | FDC6305N | ZXMN2A04DN8 | ZXMP3A17E6TA | BFC47 | 4N65G-TMS2-T | BF910

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