HAT1128R MOSFET. Datasheet pdf. Equivalent
Type Designator: HAT1128R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 48 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 930 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SOP8
HAT1128R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HAT1128R Datasheet (PDF)
0.1. hat1128r.pdf 
Size:81K _renesas
HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =
8.1. rej03g0406 hat1126rrj.pdf Size:131K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. rej03g1330 hat1127hds.pdf Size:100K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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