HAT1127H Specs and Replacement
Type Designator: HAT1127H
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: LFPAK
HAT1127H substitution
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HAT1127H datasheet
rej03g1330 hat1127hds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
hat1128r.pdf
HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =... See More ⇒
rej03g0406 hat1126rrj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: RJK0362DSP, RJK0358DSP, HAT1132R, HAT1131R, HAT1130R, HAT1129R, HAT1128R, HAT1139H, SI2302, HAT1125H, RJK0358DPA, 2SK213, 2SK214, 2SK215, 2SK216, 2SJ76, 2SJ77
Keywords - HAT1127H MOSFET specs
HAT1127H cross reference
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