2SJ78
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ78
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 180
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.2
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package:
TO220AB
2SJ78
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ78
Datasheet (PDF)
..1. Size:78K renesas
rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
..2. Size:33K hitachi
2sj76 2sj77 2sj78 2sj79.pdf
2SJ76, 2SJ77, 2SJ78, 2SJ79Silicon P-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed power switchingComplementary pair with 2SK213, 2SK214, 2SK215, 2SK216Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Fl
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