All MOSFET. 2SK2221 Datasheet

 

2SK2221 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2221

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3P

2SK2221 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2221 Datasheet (PDF)

1.1. rej03g1004 2sk2220 2sk2221.pdf Size:85K _renesas

2SK2221
2SK2221

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sk2221.pdf Size:55K _hitachi

2SK2221
2SK2221

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

 4.1. 2sk2224-01r.pdf Size:229K _update

2SK2221
2SK2221

FUJI POWER MOSFET 2SK2224-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5±0.3 Low on-resistance ±0.3 ±0.2 15.5 ø3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee ± Avalanche-proof ±0.3 2.1±0.3 1.6 +0.2 1.1—0.1 ±0.2 3.5 Applications ±0.2 ±0.2 5.45 5.45 0.6+0.2 Switc

4.2. 2sk2222.pdf Size:61K _update

2SK2221
2SK2221



 4.3. 2sk2225-80-e.pdf Size:139K _update

2SK2221
2SK2221

 Data Sheet 2SK2225-80-E R07DS1275EJ0100 1500V - 2A - MOS FET Rev.1.00 Jun 22, 2015 High Speed Power Switching Features  High breakdown voltage (V = 1500 V) DSS  High speed switching  Low drive current Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) D 1. Gate G 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item S

4.4. 2sk2228.pdf Size:544K _update

2SK2221
2SK2221



 4.5. 2sk2229.pdf Size:412K _toshiba

2SK2221
2SK2221

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 60 V) DS Enhancement

4.6. 2sk222.pdf Size:82K _sanyo

2SK2221
2SK2221

Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions Ultralow noise figure. unit:mm Large ? yfs? . 2019B Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specifications Absolute Ma

4.7. rej03g1005 2sk2225ds.pdf Size:95K _renesas

2SK2221
2SK2221

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. 2sk2220.pdf Size:72K _renesas

2SK2221
2SK2221

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped wit

4.9. 2sk2225.pdf Size:81K _renesas

2SK2221
2SK2221

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PF

4.10. 2sk2223.pdf Size:174K _fuji

2SK2221
2SK2221

N-channel MOS-FET 2SK2223-01R FAP-IIA Series 500V 0,76? 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale

4.11. 2sk2220.pdf Size:55K _hitachi

2SK2221
2SK2221

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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