RQA0005QXDQS Datasheet and Replacement
Type Designator: RQA0005QXDQS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: UPAK SC62
RQA0005QXDQS substitution
RQA0005QXDQS Datasheet (PDF)
rej03g1325 rqa0005qxdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rqa0005aqs.pdf

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A(Package Name: UPAK)3121. Gate31 2. Source3. Drain4. Source42Note: Marking is
rej03g1568 rqa0005mxaqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SK2221 , 2SJ160 , 2SJ161 , 2SJ162 , 2SJ351 , 2SJ352 , RQA0011DNS , RQA0004PXDQS , EMB04N03H , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS , RQA0009SXAQS , RQA0010UXAQS .
Keywords - RQA0005QXDQS MOSFET datasheet
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History: SI4622DY | VBZL80N03



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