BUZ900X4S MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUZ900X4S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.1 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT227

BUZ900X4S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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