RQA0005AQS PDF and Equivalents Search

 

RQA0005AQS Specs and Replacement

Type Designator: RQA0005AQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 12 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: UPAK SC62

RQA0005AQS substitution

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RQA0005AQS datasheet

 ..1. Size:75K  1
rqa0005aqs.pdf pdf_icon

RQA0005AQS

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is ... See More ⇒

 7.1. Size:123K  renesas
rej03g1568 rqa0005mxaqsds.pdf pdf_icon

RQA0005AQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.2. Size:212K  renesas
rej03g1325 rqa0005qxdqsds.pdf pdf_icon

RQA0005AQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:151K  1
rqa0008nxaqs.pdf pdf_icon

RQA0005AQS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,... See More ⇒

Detailed specifications: 2SJ352 , RQA0011DNS , RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , AOD4184A , RQA0008NXAQS , RQA0009SXAQS , RQA0010UXAQS , 2SJ661 , 2SJ665 , 2SK3707 , 2SK3821 , 2SK3823 .

Keywords - RQA0005AQS MOSFET specs

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