RQA0008NXAQS PDF and Equivalents Search

 

RQA0008NXAQS Specs and Replacement

Type Designator: RQA0008NXAQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: UPAK SC62

RQA0008NXAQS substitution

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RQA0008NXAQS datasheet

 ..1. Size:151K  1
rqa0008nxaqs.pdf pdf_icon

RQA0008NXAQS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,... See More ⇒

 0.1. Size:166K  renesas
rej03g1569 rqa0008nxaqsds.pdf pdf_icon

RQA0008NXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:213K  renesas
rej03g1326 rqa0008rxdqsds.pdf pdf_icon

RQA0008NXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:75K  1
rqa0005aqs.pdf pdf_icon

RQA0008NXAQS

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is ... See More ⇒

Detailed specifications: RQA0011DNS, RQA0004PXDQS, RQA0005QXDQS, RQA0010VXDQS, RQA0008RXDQS, RQA0009TXDQS, RQA0004LXAQS, RQA0005AQS, AO4407A, RQA0009SXAQS, RQA0010UXAQS, 2SJ661, 2SJ665, 2SK3707, 2SK3821, 2SK3823, 2SK3824

Keywords - RQA0008NXAQS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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