2SK4191LS Specs and Replacement
Type Designator: 2SK4191LS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ -
Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.56 Ohm
Package: TO220FI
- MOSFET ⓘ Cross-Reference Search
2SK4191LS datasheet
..1. Size:58K sanyo
2sk4191ls.pdf 
Ordering number ENA1206 2SK41911LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4191LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
..2. Size:279K inchange semiconductor
2sk4191ls.pdf
isc N-Channel MOSFET Transistor 2SK4191LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.1. Size:270K sanyo
2sk4193ls.pdf
2SK4193LS Ordering number ENA1371 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4193LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.2. Size:55K sanyo
2sk4195ls.pdf
Ordering number ENA1232 2SK4195LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4195LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications ... See More ⇒
8.3. Size:271K sanyo
2sk4194ls.pdf
2SK4194LS Ordering number ENA1372 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4194LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.4. Size:159K sanyo
2sk4198ls.pdf
2SK4198LS Ordering number ENA1171A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198LS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF(typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Uni... See More ⇒
8.5. Size:68K sanyo
2sk4197ls.pdf
Ordering number ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications ... See More ⇒
8.6. Size:267K sanyo
2sk4197fs.pdf
2SK4197FS Ordering number ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FS Applications Features High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source ... See More ⇒
8.7. Size:271K sanyo
2sk4192ls.pdf
2SK4192LS Ordering number ENA1413 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4192LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.8. Size:66K sanyo
2sk4196ls.pdf
Ordering number ENA1233 2SK4196LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4196LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications ... See More ⇒
8.9. Size:269K sanyo
2sk4199ls.pdf
2SK4199LS Ordering number ENA1332 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4199LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.10. Size:267K sanyo
2sk4198fs.pdf
2SK4198FS Ordering number ENA1370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un... See More ⇒
8.11. Size:324K sanyo
2sk4198fg.pdf
2SK4198FG Ordering number ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FG Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un... See More ⇒
8.12. Size:321K sanyo
2sk4197fg.pdf
2SK4197FG Ordering number ENA1367 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FG Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.13. Size:280K inchange semiconductor
2sk4193ls.pdf
isc N-Channel MOSFET Transistor 2SK4193LS FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.95 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.14. Size:279K inchange semiconductor
2sk4195ls.pdf
isc N-Channel MOSFET Transistor 2SK4195LS FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.15. Size:279K inchange semiconductor
2sk4194ls.pdf
isc N-Channel MOSFET Transistor 2SK4194LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.16. Size:280K inchange semiconductor
2sk4198ls.pdf
isc N-Channel MOSFET Transistor 2SK4198LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.17. Size:279K inchange semiconductor
2sk4197ls.pdf
isc N-Channel MOSFET Transistor 2SK4197LS FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.25 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.18. Size:278K inchange semiconductor
2sk4192ls.pdf
isc N-Channel MOSFET Transistor 2SK4192LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.04 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.19. Size:280K inchange semiconductor
2sk4196ls.pdf
isc N-Channel MOSFET Transistor 2SK4196LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.20. Size:280K inchange semiconductor
2sk4199ls.pdf
isc N-Channel MOSFET Transistor 2SK4199LS FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 2SK3829, 2SK3830, 2SK3832, 2SK3833, 2SK3835, 2SK3836, 2SK4094, 2SK4171, IRF640N, 2SK4192LS, 2SK4193LS, 2SK4194LS, 2SK4195LS, 2SK4197FG, 2SK4197FS, 2SK4198FG, 2SK4198FS
Keywords - 2SK4191LS MOSFET specs
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