MCH3376
MOSFET. Datasheet pdf. Equivalent
Type Designator: MCH3376
Marking Code: QH
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.7
nC
trⓘ - Rise Time: 9.7
nS
Cossⓘ -
Output Capacitance: 26
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.241
Ohm
Package:
SOT323
MCPH3
MCH3376
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCH3376
Datasheet (PDF)
..1. Size:276K sanyo
mch3376.pdf 
MCH3376Ordering number : ENA1564SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3376ApplicationsFeatures Low ON-resistance. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID
..2. Size:1015K onsemi
mch3376.pdf
Ordering number : ENA1564BMCH3376Power MOSFEThttp://onsemi.com 20V, 241m , 1.5A, Single P-ChannelFeatures ESD diode-Protected gate Drive at low voltage:1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou
8.1. Size:379K 1
mch3375.pdf
MCH3375Ordering number : ENA0342SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3375ApplicationsFeatures ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc
8.2. Size:264K sanyo
mch3374.pdf
Ordering number : ENA0857 MCH3374SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETMCH3374 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS
8.3. Size:66K sanyo
mch3377.pdf
Ordering number : ENA0957 MCH3377SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3377ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
8.4. Size:569K onsemi
mch3374.pdf
MCH3374 Power MOSFET 12V, 70m, 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R
8.5. Size:1020K onsemi
mch3377.pdf
Ordering number : ENA0957BMCH3377P-Channel Power MOSFEThttp://onsemi.com 20V, 3A, 83m , Single MCPH3Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
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