FKP250A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FKP250A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 630
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043
Ohm
Package:
TO3PF
FKP250A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FKP250A
Datasheet (PDF)
..1. Size:308K sanken-ele
fkp250a.pdf 
N-Channel MOS FET FKP250A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage V
..2. Size:264K inchange semiconductor
fkp250a.pdf
isc N-Channel MOSFET Transistor FKP250AFEATURESDrain Current I =50A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 43m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:337K sanken-ele
fkp252.pdf
MOSFET FKP252 December. 2005 Package---TO220F Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to Source Voltage VDSS 250 VGate
9.2. Size:307K sanken-ele
fkp253.pdf
N-Channel MOS FET FKP253 June, 2007 Features Package---FM20 (TO220 Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage VDS
9.3. Size:254K inchange semiconductor
fkp252.pdf
isc N-Channel MOSFET Transistor FKP252FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
9.4. Size:255K inchange semiconductor
fkp253.pdf
isc N-Channel MOSFET Transistor FKP253FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
