R5009ANJ Specs and Replacement

Type Designator: R5009ANJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: LPTS

R5009ANJ substitution

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R5009ANJ datasheet

 ..1. Size:267K  rohm
 r5009anj.pdf pdf_icon

R5009ANJ

10V Drive Nch MOSFET R5009ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 2.7 5.08 4) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) ... See More ⇒

 7.1. Size:268K  rohm
 r5009anx.pdf pdf_icon

R5009ANJ

10V Drive Nch MOSFET R5009ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.8 4) Gate-source voltage (VGSS) guaranteed to be 30V. (1)Base 2.54 2.54 0.75 2.6 5) Drive circuits can be simple. (2)Collector (1) (2) (3) 6) Para... See More ⇒

 9.1. Size:1026K  rohm
 r5009fnx.pdf pdf_icon

R5009ANJ

Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1)Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel use... See More ⇒

 9.2. Size:3366K  rohm
 r5009fnj.pdf pdf_icon

R5009ANJ

R5009FNJ Datasheet Nch 500V 9A Power MOSFET lOutline l LPT(S) VDSS 500V RDS(on)(Max.) 0.84 ID 9A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be... See More ⇒

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Detailed specifications: 2SK3018UB, 2SK3019, 2SK3019EB, 2SK3541, R4008AND, R5005CNJ, R5007ANJ, R5007ANX, IRF640, R5009ANX, R5009FNX, R5011ANJ, R5011ANX, R5011FNX, R5013ANJ, R5013ANX, R5016ANJ

Keywords - R5009ANJ MOSFET specs

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