R5019ANX Specs and Replacement

Type Designator: R5019ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220FM

R5019ANX substitution

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R5019ANX datasheet

 ..1. Size:1187K  rohm
 r5019anx.pdf pdf_icon

R5019ANX

Data Sheet 10V Drive Nch MOSFET R5019ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type... See More ⇒

 7.1. Size:1186K  rohm
 r5019anj.pdf pdf_icon

R5019ANX

Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide SOA. 2.7 5.08 (1) Gate (1) (2) (3) (2) Drain 4) Drive circuits can be simple. (3) Source 5) Parallel use is easy. Application Switching Packaging specif... See More ⇒

Detailed specifications: R5011ANX, R5011FNX, R5013ANJ, R5013ANX, R5016ANJ, R5016ANX, R5016FNX, R5019ANJ, 2N7000, R5021ANX, R5205CND, R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ

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