R6004CND MOSFET. Datasheet pdf. Equivalent
Type Designator: R6004CND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 222 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: CPT3 SC63 SOT428
R6004CND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6004CND Datasheet (PDF)
r6004cnd.pdf
Data Sheet10V Drive Nch MOSFET R6004CND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide SOA.(1) Gate 0.650.9 2.3(2) Drain (1) (2) (3)2.3 0.54) Drive circuits can be simple.(3) Source 1.05) Parallel use is easy. ApplicationSwitchi
r6004jnx.pdf
R6004JNXDatasheetNch 600V 4A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)1.43ID4APD35W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
r6004jnd3.pdf
R6004JND3DatasheetNch 600V 4A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
r6004jnj.pdf
R6004JNJDatasheetNch 600V 4A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPacka
r6004knj.pdf
R6004KNJDatasheetNch 600V 4A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.98 LPT(S)ID4.0APD58W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packing
r6004knx.pdf
R6004KNXDatasheetNch 600V 4A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.98 TO-220FMID4.0APD 40W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube
r6004end.pdf
R6004END Nch 600V 4A Power MOSFET Data SheetlOutline(2) VDSS600VCPT3(SC-63)RDS(on) (Max.)0.980WID4A(1) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.
r6004enx.pdf
R6004ENX Nch 600V 4A Power MOSFET Data SheetlOutlineVDSS600VTO-220FMRDS(on) (Max.)980mWID4A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pla
r6004enj.pdf
R6004ENJ Nch 600V 4A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.980WID4A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr
r6004knj.pdf
isc N-Channel MOSFET Transistor R6004KNJFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 980m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6004jnx.pdf
isc N-Channel MOSFET Transistor R6004JNXFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
r6004jnd3.pdf
isc N-Channel MOSFET Transistor R6004JND3FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6004knx.pdf
isc N-Channel MOSFET Transistor R6004KNXFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 980m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6004jnj.pdf
isc N-Channel MOSFET Transistor R6004JNJFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
r6004enx.pdf
isc N-Channel MOSFET Transistor R6004ENXFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 980m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6004enj.pdf
isc N-Channel MOSFET Transistor R6004ENJFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 980m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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