R6012ANJ Specs and Replacement

Type Designator: R6012ANJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: LPTS LPTL

R6012ANJ substitution

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R6012ANJ datasheet

 ..1. Size:321K  rohm
 r6012anj.pdf pdf_icon

R6012ANJ

10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 2.54 0.4 0.78 4) Drive circuits can be simple. 2.7 5.08 5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source Each lead has same ... See More ⇒

 7.1. Size:1019K  rohm
 r6012anx.pdf pdf_icon

R6012ANJ

R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline TO-220FM VDSS 600V RDS(on) (Max.) 0.42 ID 12A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead... See More ⇒

 9.1. Size:1244K  rohm
 r6012fnx.pdf pdf_icon

R6012ANJ

Data Sheet 10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel us... See More ⇒

 9.2. Size:831K  rohm
 r6012fnj.pdf pdf_icon

R6012ANJ

R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.51W ID 12A (1) PD 50W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fre... See More ⇒

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Detailed specifications: R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ, R6008FNX, R6010ANX, IRF9540N, R6012ANX, R6012FNX, R6015ANJ, R6015ANX, R6015ANZ, R6015FNX, R6018ANJ, R6018ANX

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