R6012ANJ Datasheet and Replacement

10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 2.54 0.40.784) Drive circuits can be simple. 2.75.085) Parallel use is easy. (1) Gate(1) (2) (3)(2) Drain(3) SourceEach lead has same

R6012ANXNch 600V 12A Power MOSFET DatasheetOutline TO-220FMVDSS600VRDS(on) (Max.)0.42ID12APD50W(1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead

Data Sheet10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel us

R6012FNJ Nch 600V 12A Power MOSFET DatasheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.51WID12A(1) PD50W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fre