All MOSFET. R6015FNX Datasheet

 

R6015FNX MOSFET. Datasheet pdf. Equivalent

Type Designator: R6015FNX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 1110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO220FM

R6015FNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6015FNX Datasheet (PDF)

1.1. r6015fnx.pdf Size:1263K _rohm

R6015FNX
R6015FNX

Data Sheet 10V Drive Nch MOSFET R6015FNX ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1) Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) ? VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel use is easy. ?

5.1. r6015anz.pdf Size:1150K _rohm

R6015FNX
R6015FNX

Data Sheet 10V Drive Nch MOSFET R6015ANZ ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 ?3.6 ?Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) (2) (3) (1) Gate 0.9 ? Application (2) Drain 5.45 5.45 (3) Source Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Basic

5.2. r6015anj.pdf Size:322K _rohm

R6015FNX
R6015FNX

10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 0.78 2.7 5.08 5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source Each lead has same dim

 5.3. r6015anx.pdf Size:1344K _rohm

R6015FNX
R6015FNX

R6015ANX Nch 600V 15A Power MOSFET Datasheet ?Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.3? ID 15A PD (1)(2)(3) 50W ?Features ?Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; Ro

Datasheet: R6008FNX , R6010ANX , R6012ANJ , R6012ANX , R6012FNX , R6015ANJ , R6015ANX , R6015ANZ , IRFP4332 , R6018ANJ , R6018ANX , R6020ANJ , R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ .

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