All MOSFET. R6020FNX Datasheet

 

R6020FNX MOSFET. Datasheet pdf. Equivalent

Type Designator: R6020FNX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 1660 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO220FM

R6020FNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6020FNX Datasheet (PDF)

1.1. r6020fnx.pdf Size:1274K _rohm

R6020FNX
R6020FNX

Data Sheet 10V Drive Nch MOSFET R6020FNX ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1.2 1) Fast reverse recovery time (trr) 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain 4) Gate-source voltage (1) (2) (3) (3) Source ? VGSS garanteed to be 30V . 5) Drive circuits can be simp

5.1. r6020anz.pdf Size:1153K _rohm

R6020FNX
R6020FNX

Data Sheet 10V Drive Nch MOSFET R6020ANZ ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 ?3.6 ?Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain ? Application 5.45 5.45 (3) Source Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Bas

5.2. r6020anj.pdf Size:231K _rohm

R6020FNX
R6020FNX

10V Drive Nch MOSFET R6020ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 5) Parallel use is easy. 0.78 2.7 5.08 (1) Base (Gate) (1) (2) (3) (2) Collector (Drain) Applications (3

 5.3. r6020anx.pdf Size:1704K _rohm

R6020FNX
R6020FNX

R6020ANX Nch 600V 20A Power MOSFET Datasheet ?Outline TO-220FM VDSS 600V RDS(on) (Max.) 0.22? ID 20A PD 50W (1)(2)(3) ?Features ?Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; Ro

Datasheet: R6015ANX , R6015ANZ , R6015FNX , R6018ANJ , R6018ANX , R6020ANJ , R6020ANX , R6020ANZ , IRF1405 , R6025ANZ , R6046ANZ , R6046FNZ , R8002ANX , R8008ANX , RAF040P01 , RAL025P01 , RAL035P01 .

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