R6025ANZ Specs and Replacement
Type Designator: R6025ANZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 135 nS
Cossⓘ - Output Capacitance: 2400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO3PF
R6025ANZ substitution
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R6025ANZ datasheet
r6025anz.pdf
10V Drive Nch MOSFET R6025ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.0 5) Parallel use is easy. 2.0 3.0 0.75 Applications 0.9 (1)Gate Switching 5.45 5.45 (2)Drain (3)Souce... See More ⇒
r6025fnz1.pdf
R6025FNZ1 Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.18W ID 25A (3) PD 150W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pl... See More ⇒
r6025fnz.pdf
R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.18W ID 25A (1) (2) PD 150W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p... See More ⇒
Detailed specifications: R6015ANZ, R6015FNX, R6018ANJ, R6018ANX, R6020ANJ, R6020ANX, R6020ANZ, R6020FNX, 5N65, R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, RAL025P01, RAL035P01, RAL045P01
Keywords - R6025ANZ MOSFET specs
R6025ANZ cross reference
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R6025ANZ substitution
R6025ANZ replacement
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