RCD080N25 Specs and Replacement

Type Designator: RCD080N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: CPT3 SC63 SOT428

RCD080N25 substitution

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RCD080N25 datasheet

 ..1. Size:1152K  rohm
 rcd080n25.pdf pdf_icon

RCD080N25

Data Sheet 10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

 0.1. Size:1152K  rohm
 rcd080n25tl.pdf pdf_icon

RCD080N25

Data Sheet 10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

Detailed specifications: RAL025P01, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, IRFP250, RCD100N20, RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, RCX120N20, RCX120N25

Keywords - RCD080N25 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.