RP1E125XN Specs and Replacement

Type Designator: RP1E125XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: MPT6

RP1E125XN substitution

- MOSFET ⓘ Cross-Reference Search

 

RP1E125XN datasheet

 ..1. Size:1134K  rohm
 rp1e125xn.pdf pdf_icon

RP1E125XN

Data Sheet 4V Drive Nch MOSFET RP1E125XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic orderi... See More ⇒

 9.1. Size:338K  rohm
 rp1e100rp.pdf pdf_icon

RP1E125XN

4V Drive Pch MOSFET RP1E100RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) 3) 4V drive. Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 1000 RP1E100RP 2 (1) ... See More ⇒

 9.2. Size:336K  rohm
 rp1e100rptr.pdf pdf_icon

RP1E125XN

4V Drive Pch MOSFET RP1E100RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) 3) 4V drive. Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 1000 RP1E100RP 2 (1) ... See More ⇒

 9.3. Size:321K  rohm
 rp1e100xn.pdf pdf_icon

RP1E125XN

4V Drive Nch MOSFET RP1E100XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pi... See More ⇒

SHOW MORE

Detailed specifications: RMW280N03, RP1A090ZP, RP1E070XN, RP1E075RP, RP1E090RP, RP1E090XN, RP1E100RP, RP1E100XN, K2611, RP1H065SP, RP1L055SN, RP1L080SN, RQ1A060ZP, RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN

Keywords - RP1E125XN MOSFET specs

 RP1E125XN cross reference

 RP1E125XN equivalent finder

 RP1E125XN pdf lookup

 RP1E125XN substitution

 RP1E125XN replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility