RSE002P03 Datasheet and Replacement
Type Designator: RSE002P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: EMT3
RSE002P03 substitution
RSE002P03 Datasheet (PDF)
rse002p03.pdf

RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
rse002p03tl.pdf

RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
rse002n06.pdf

2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT31.6 0.70.3 0.55( )3Features( ) ( )2 11) High speed switing.0.2 0.20.152) Small package(EMT3). 0.5 0.51.03) Low voltage drive(2.5V drive).(1)Source(2)GateAbbreviated symbol : RK(3)Drain ApplicationSwitching Packaging specifications Inner
Datasheet: RSD100N10 , RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , 8205A , RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 .
History: AONS62614 | APT56F50L
Keywords - RSE002P03 MOSFET datasheet
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History: AONS62614 | APT56F50L



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