RSE002P03 Specs and Replacement

Type Designator: RSE002P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: EMT3

RSE002P03 substitution

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RSE002P03 datasheet

 ..1. Size:62K  rohm
 rse002p03.pdf pdf_icon

RSE002P03

RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui... See More ⇒

 0.1. Size:61K  rohm
 rse002p03tl.pdf pdf_icon

RSE002P03

RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui... See More ⇒

 8.1. Size:182K  rohm
 rse002n06.pdf pdf_icon

RSE002P03

2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 1.6 0.7 0.3 0.55 ( ) 3 Features ( ) ( ) 2 1 1) High speed switing. 0.2 0.2 0.15 2) Small package(EMT3). 0.5 0.5 1.0 3) Low voltage drive(2.5V drive). (1)Source (2)Gate Abbreviated symbol RK (3)Drain Application Switching Packaging specifications Inner ... See More ⇒

Detailed specifications: RSD100N10, RSD140P06, RSD150N06, RSD160P05, RSD175N10, RSD200N05, RSD200N10, RSE002N06, 2SK3878, RSF010P05, RSF014N03, RSF015N06, RSH065N06, RSH070N05, RSH070P05, RSJ10HN06, RSJ250P10

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