RSH065N06 Specs and Replacement
Type Designator: RSH065N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
RSH065N06 substitution
- MOSFET ⓘ Cross-Reference Search
RSH065N06 datasheet
rsh065n06.pdf
4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basi... See More ⇒
rsh065n06tb1.pdf
4V Drive Nch MOSFET RSH065N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basi... See More ⇒
rsh065n03tb1.pdf
4V Drive Nch MOSFET RSH065N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package ... See More ⇒
Detailed specifications: RSD175N10, RSD200N05, RSD200N10, RSE002N06, RSE002P03, RSF010P05, RSF014N03, RSF015N06, IRF4905, RSH070N05, RSH070P05, RSJ10HN06, RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10
Keywords - RSH065N06 MOSFET specs
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