RSQ015P10 Datasheet and Replacement
Type Designator: RSQ015P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TSMT6
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RSQ015P10 Datasheet (PDF)
rsq015p10.pdf

Data Sheet4V Drive Pch MOSFET RSQ015P10 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT6Features1) Low on-resistance.2) Low voltage drive(4V).3) Small surface mount package (TSMT6).Abbreviated symbol : ZN ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TR2Basic ordering unit (p
rsq015n06tr.pdf

RSQ015N06 Nch 60V 1.5A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 60V(5) (4) RDS(on) (Max.)290mW(1) ID1.5A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant
rsq015n06.pdf

4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.85 1.90.95 0.95 0.7(6) (5) (4) Features 1) Low On-resistance. 0~0.12) Small Surface Mount Package (TSMT6). (1) (2) (3)1pin mark0.160.4Abbreviated symbol : PX Application Inner circuit Switching (6) (5) (4)2 Packaging specifications Package T
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BSZ035N03LSG | SVF9N90F
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History: BSZ035N03LSG | SVF9N90F



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