ECG221 Specs and Replacement
Type Designator: ECG221
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.018 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 5.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO72
ECG221 substitution
- MOSFET ⓘ Cross-Reference Search
ECG221 datasheet
Detailed specifications: C2T206, C2T211, C2T212, C2T213, C2T225, C2T225A, DM601, DM616, 20N60, ECG454, ECG455, F5001H, F5016H, F5017H, F5018, F5019, F5020
Keywords - ECG221 MOSFET specs
ECG221 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPB34CN10NG | C2T212
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