S2N7002DW MOSFET. Datasheet pdf. Equivalent
Type Designator: S2N7002DW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT363
S2N7002DW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
S2N7002DW Datasheet (PDF)
s2n7002dw.pdf
S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363MECHANICAL DATA Case: SOT-363Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INF
s2n7002dm.pdf
S2N7002DM SMALL SIGNAL MOSFET 115mA 60V N-CHANNEL FEATURES FAST SWITCHING SPEED. EASILY DESIGNED DRIVE CIRCUITS. LOW ON-RESISTANCE ESD PROTECTED:1000V MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: S2N7002DM Halogen Free: S2N7002DM-H CASESOT-23-6L DIMENSIONS IN MILLIMETERS AND (INCHES) ABSOLUTE MAXIMUM RATINGS RATINGS AT 25C AMBIEN
s2n7002w.pdf
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package AL33Top
s2n7002.pdf
S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product SOT-23 A suffix of -C specifies halogen & lead-free ALFEATURES 33 Pb-Free Package is Available Top View C BPACKAGING INFORMATION 11 22K EDrain Drain 3 3 D H JF G702 W 1 Millimeter Millimeter REF. REF. Min. Max. Min.
s2n7002k.pdf
S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of -C specifies halogen & lead-free AL33Top View C BFEATURES 11 23 DRAIN2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1H JF GGATE* Easily designed drive circuits. Easy to parallel.
s2n7002kw.pdf
S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.
hss2n7002k.pdf
HSS2N7002K N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V We declare that the material of product compliance with Rohs requirements and RDS(ON),max 2 Halogen Free. ESD protected ID 0.3 A Low RDS(on) SOT23 Pin Configuration l Low side load switch l Level shift circutis l DC-DC converter l Portable applications i.e. DSC, PDA, Cell Phone,
vs2n7002k.pdf
VS2N7002K 60V/760mA N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),typ@VGS=10V 1 N-Channel R DS(on),typ@VGS=4.5V 1.1 Enhancement Mode I D 0.76 A Fast Switching ESD Protected by HBM up to 2.5KV SOT23 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS2N7002K SOT23 72K 3000pcs/reel
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: KP101D
History: KP101D
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