F5018 Specs and Replacement

Type Designator: F5018

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: KPACK

F5018 substitution

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F5018 datasheet

 ..1. Size:40K  fuji
 f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023 f5028 f5029 f5030 f5031 f5032 f5033 f5038 f5041 f5042 f5043 f5044 f9202 f9203 f9206 f9207 f9208 f9209.pdf pdf_icon

F5018

MOSFET / P wer MOSFETs MOSFET P wer MOSFET F T I F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms ( ) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3... See More ⇒

 0.1. Size:670K  fuji
 f5018-s.pdf pdf_icon

F5018

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Detailed specifications: DM601, DM616, ECG221, ECG454, ECG455, F5001H, F5016H, F5017H, IRF640, F5019, F5020, F5021H, F5022, F5023, F5026, F5027, F5028

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