All MOSFET. F5020 Datasheet

 

F5020 Datasheet and Replacement


   Type Designator: F5020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: KPACK
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F5020 Datasheet (PDF)

 ..1. Size:40K  fuji
 f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023 f5028 f5029 f5030 f5031 f5032 f5033 f5038 f5041 f5042 f5043 f5044 f9202 f9203 f9206 f9207 f9208 f9209.pdf pdf_icon

F5020

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

 0.1. Size:506K  fuji
 f5020-s.pdf pdf_icon

F5020

0. Cautions Although Fuji Electric Device Technology is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric Device Technology semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other

Datasheet: ECG221 , ECG454 , ECG455 , F5001H , F5016H , F5017H , F5018 , F5019 , IRF640N , F5021H , F5022 , F5023 , F5026 , F5027 , F5028 , F5029 , F5030 .

History: KF12N60P | KI2303 | AFN3456 | UF630G-TF1-T | IXFH110N10P | RSE002P03TL | IPD60R1K5CE

Keywords - F5020 MOSFET datasheet

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