SMG2390N MOSFET Datasheet: N-Ch, 150V, 1.1A. Full specification with pinout and replacement list

SMG2390N Specs and Replacement

Type Designator: SMG2390N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: SC59

SMG2390N substitution

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SMG2390N datasheet

..1. Size:136K secos
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SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power A L loss and heat dissipation. Typical applica... See More ⇒

8.1. Size:1822K secos
smg2391p.pdf pdf_icon

SMG2391P -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 FEATURES Low RDS(on) trench technology A L Low thermal impedance 3 3 Fast switching speed Top View C B 1 1 2 2 K E APPLICATIONS D PoE Power Sourcing Equipment ... See More ⇒

8.2. Size:140K secos
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SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss A L and heat dissipation. Typical applicat... See More ⇒

8.3. Size:137K secos
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SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, A L making this device ideal for use in power ... See More ⇒

Detailed specifications: SMG2342NE, SMG2343, SMG2343P, SMG2343PE, SMG2358N, SMG2359P, SMG2370N, SMG2371P, IRF1010E, SMG2391P, SMG2398N, SMG2398NE, SMG3400, SMG3401, SMG3402, SMG3403, SMG3407